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The RN1508(TE85L,F) is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It features a dual configuration housed in an SMV surface-mount package. Key electrical parameters include a collector-emitter voltage (Vceo) of 50 V, continuous collector current of 100 mA, and power dissipation of 300 mW. The device supports a maximum operating frequency of 250 MHz with a typical input resistance of 4.7 kOhms.
Verify the specific suffix TE85L against the manufacturer's official datasheet to confirm tape and reel specifications. Ensure the component meets RoHS compliance requirements for your manufacturing process. Cross-reference the SMV package dimensions with your PCB footprint library to guarantee mechanical compatibility before finalizing procurement orders.
Select this component when a dual NPN pre-biased transistor is required for space-constrained designs. The integrated resistor network reduces external component count compared to discrete solutions. Consider the 50 V rating and 100 mA current limit to ensure operation within safe boundaries for low-power signal switching tasks.
This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal biasing networks. The TE85L suffix indicates a specific taping format for surface-mount technology. These devices are designed to replace multiple discrete components, simplifying schematic design and reducing board space in consumer electronics and industrial control systems.
Consult official substitution lists for equivalent dual NPN pre-biased transistors from other manufacturers. Verify that alternative parts match the 50 V voltage rating, 100 mA current capacity, and SMV package outline to maintain mechanical and electrical compatibility.