RN1509(TE85L,F)

RN1509(TE85L,F)

$0.32
  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-

SKU:3de11f418a6d Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV

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RN1509(TE85L,F)

Overview

The RN1509(TE85L,F) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into a single surface-mount package, specifically the SMV-5 configuration. The device is designed for switching, inverter, interface, and driver circuit applications. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The typical input resistance is 47 kΩ, with a resistor ratio of 1. The component supports a maximum operating frequency of 250 MHz and has a power dissipation rating of 300 mW.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce external component count
  • Optimized for compact equipment manufacturing through reduced assembly complexity
  • Designed for high-speed switching applications with a 250 MHz operating frequency

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's official datasheet to confirm packaging type and tape-and-reel specifications. Ensure compatibility with RoHS directives and check for any recent lifecycle status updates directly from Toshiba Semiconductor and Storage before finalizing procurement plans.

Selection Notes

Select this component when a dual NPN BRT with a 47 kΩ base resistance is required. Compare the 300 mW power dissipation and 50 V voltage ratings against circuit requirements. Verify that the SMV-5 footprint fits the PCB layout constraints and that the 250 MHz frequency response meets the signal speed needs.

Part Context

This part belongs to the RN15xx series of general-purpose digital transistors. It shares the same SMV-5 package and core electrical limits as variants like the RN1506 and RN1503, differing primarily in the internal bias resistor values. The series is engineered to simplify circuit design by replacing discrete transistor and resistor combinations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other RN15xx series parts or consult the manufacturer for direct equivalents.

RN1509(TE85L,F)RN1509(TE85L,F)
$0.32
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