SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN1509(TE85L,F) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into a single surface-mount package, specifically the SMV-5 configuration. The device is designed for switching, inverter, interface, and driver circuit applications. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The typical input resistance is 47 kΩ, with a resistor ratio of 1. The component supports a maximum operating frequency of 250 MHz and has a power dissipation rating of 300 mW.
Verify the specific ordering suffix TE85L,F against the manufacturer's official datasheet to confirm packaging type and tape-and-reel specifications. Ensure compatibility with RoHS directives and check for any recent lifecycle status updates directly from Toshiba Semiconductor and Storage before finalizing procurement plans.
Select this component when a dual NPN BRT with a 47 kΩ base resistance is required. Compare the 300 mW power dissipation and 50 V voltage ratings against circuit requirements. Verify that the SMV-5 footprint fits the PCB layout constraints and that the 250 MHz frequency response meets the signal speed needs.
This part belongs to the RN15xx series of general-purpose digital transistors. It shares the same SMV-5 package and core electrical limits as variants like the RN1506 and RN1503, differing primarily in the internal bias resistor values. The series is engineered to simplify circuit design by replacing discrete transistor and resistor combinations.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other RN15xx series parts or consult the manufacturer for direct equivalents.