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The RN1510(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage, housed in an SMV-5 surface-mount package. It integrates two transistors with bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 300 mW. The device features a typical input resistance of 47 kΩ, a minimum DC current gain (hFE) of 80, and a maximum operating frequency of 250 MHz. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix TE85L,F against the manufacturer's datasheet to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact electrical characteristics required for the target application, as variations may exist within the product family.
Select this component when a dual NPN configuration with integrated biasing is required for high-frequency switching. The 47 kΩ input resistance suits standard logic interface levels. Verify that the 300 mW power dissipation rating accommodates the thermal requirements of the specific PCB layout and ambient conditions.
This component belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. The SMV-5 package provides a small footprint suitable for portable electronics and dense board layouts. The TE85L,F suffix indicates specific packaging and environmental compliance attributes defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other dual NPN digital transistors in the SMV-5 package only after verifying pinout compatibility and electrical parameter equivalence.