RN1510(TE85L,F)

RN1510(TE85L,F)

$0.31
  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-

SKU:674b1698e502 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV

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RN1510(TE85L,F)

Overview

The RN1510(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage, housed in an SMV-5 surface-mount package. It integrates two transistors with bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 300 mW. The device features a typical input resistance of 47 kΩ, a minimum DC current gain (hFE) of 80, and a maximum operating frequency of 250 MHz. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce component count
  • Designed for high-speed switching applications with a 250 MHz operating frequency
  • Utilizes compact SMV-5 surface-mount packaging for space-constrained designs

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's datasheet to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact electrical characteristics required for the target application, as variations may exist within the product family.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for high-frequency switching. The 47 kΩ input resistance suits standard logic interface levels. Verify that the 300 mW power dissipation rating accommodates the thermal requirements of the specific PCB layout and ambient conditions.

Part Context

This component belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. The SMV-5 package provides a small footprint suitable for portable electronics and dense board layouts. The TE85L,F suffix indicates specific packaging and environmental compliance attributes defined by the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other dual NPN digital transistors in the SMV-5 package only after verifying pinout compatibility and electrical parameter equivalence.

RN1510(TE85L,F)RN1510(TE85L,F)
$0.31
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