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The RN1511(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into a single ESV-5 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 100 mW. The device features a typical input resistance of 47 kOhms and a minimum DC current gain (hFE) of 80. It operates within a temperature range of -55°C to +150°C and supports a maximum operating frequency of 250 MHz.
Verify the specific ordering suffix TE85L,F against the manufacturer's latest datasheet to confirm tape-and-reel packaging and lead-free compliance. Ensure the selected distributor provides traceable documentation matching the Toshiba Semiconductor and Storage part number to avoid counterfeit components.
Select this component when a dual NPN configuration with integrated biasing is required in an ESV-5 footprint. Confirm that the 47 kOhm input resistance aligns with the driving logic levels and that the 100 mA collector current meets the load requirements. Verify thermal management capabilities for the 100 mW power dissipation limit in the target enclosure.
This part belongs to Toshiba's RN series of bias resistor-built-in transistors. These devices are designed to simplify circuit design by replacing discrete transistors and resistors with a single packaged unit. The RN1511 specifically offers a dual NPN configuration suitable for push-pull or differential applications where space savings are critical.
Consult official cross-reference lists for direct equivalents. Potential substitutes may include other dual NPN digital transistors in ESV-5 packages from manufacturers like ROHM or ON Semiconductor, provided pinouts and electrical ratings match.