RN1601(TE85L,F)

Overview

The RN1601(TE85L,F) is a pre-biased dual NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in biasing resistors in a surface-mount SM-6 package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It features a power dissipation rating of 300mW and operates at frequencies up to 250MHz. The component is designed for efficient circuit integration, offering high DC current gain and low noise performance suitable for various signal processing applications.

Feature Summary

• Integrates dual NPN transistors with built-in biasing resistors for simplified circuit design
• Supports high-frequency operation up to 250MHz with low noise characteristics
• Provides robust electrical ratings including 50V collector-emitter voltage and 100mA continuous current
• Utilizes compact surface-mount SM-6 packaging for space-efficient board layouts

Applications

• High-frequency signal amplification in communication systems
• Switching circuits requiring fast response times
• Audio amplifier stages and pre-driver applications
• Logic interface circuits for level shifting and buffering

Procurement Notes

Verify the specific ordering suffix TE85L,F to ensure compatibility with required tape-and-reel packaging specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary due to production cycles. Cross-reference pinout configurations against schematic requirements before finalizing procurement orders to prevent installation errors.

Selection Notes

Select this component when dual NPN switching or amplification is required within a single footprint. Consider its 250MHz frequency limit and 300mW power dissipation for thermal management. Evaluate the integrated resistor values against base drive requirements to ensure proper biasing without external components. Compare alternative packages if PCB space constraints differ from the SM-6 form factor.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which integrate resistors to simplify biasing networks. The RN1601 specifically offers dual NPN configuration, distinguishing it from single-transistor variants. It complements other models like the RN1605 and RN1705JE, providing options for different resistance ratios and package types while maintaining consistent performance standards for digital and analog switching applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.