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The RN1602(TE85L,F) is a built-in bias resistor transistor (BRT) manufactured by Toshiba Semiconductor and Storage. This NPN silicon epitaxial planar device integrates an NPN transistor with two internal bias resistors in a single SOT-323 surface-mount package. The standard configuration includes a base resistor of 10 kΩ and an emitter-base resistor of 10 kΩ, providing a fixed current gain ratio. Designed for switching applications, it operates with a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. The component utilizes the TE85L tape-and-reel packaging format to facilitate automated assembly processes.
Verify the specific suffix TE85L confirms the tape-and-reel packaging quantity and orientation required for your pick-and-place equipment. Ensure the ordering code matches the exact resistor values and polarity specified in the official datasheet to prevent functional mismatches during production integration.
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the 50V collector-emitter voltage and 100mA current limits exceed the maximum operational stresses of the target circuit. Confirm compatibility with the SOT-323 footprint and thermal dissipation capabilities of the host PCB layout.
This part belongs to Toshiba's RN series of built-in bias resistor transistors. These devices are engineered to replace discrete transistor-resistor combinations, offering improved consistency and reduced assembly time. The RN1602 specifically denotes the NPN variant with defined internal resistance ratios, distinguishing it from PNP counterparts or different resistor value configurations within the same family.
Publicly confirmed substitute part numbers are not available in verified documentation. Cross-reference only with identical RN1602 variants from Toshiba or authorized distributors ensuring matching pinout and electrical characteristics.