SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN1604(TE85L,F) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors into a single surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistance values are typically 22 kΩ for the base resistor (R1) and 47 kΩ for the emitter resistor (R2). Key electrical parameters include a DC current gain (hFE) of at least 80 at 10mA and 5V, a saturation voltage of 300mV max at 250µA base current, and a transition frequency of 250MHz. Power dissipation is rated at 300mW.
Verify the specific suffix TE85L against the manufacturer's official datasheet to confirm pinout and electrical characteristics match design requirements. Ensure RoHS compliance status aligns with project specifications. Confirm availability through authorized distributors as lead times may vary based on production schedules.
Select this component when a dual NPN BRT configuration is required for space-constrained designs. Verify that the integrated 22kΩ and 47kΩ resistor values suit the target logic levels and drive currents. Compare hFE and Vce(sat) specifications against load requirements to ensure adequate switching performance.
This part belongs to the RN16xx series of Bias Resistor Built-in Transistors from Toshiba. These devices are engineered to replace discrete transistor and resistor networks, offering a standardized solution for digital switching applications. The TE85L suffix indicates a specific tape-and-reel packaging format optimized for automated assembly processes.
Consult the official Toshiba RN1607-09 datasheet for direct cross-reference information. Potential substitutes within the same family include RN1607, RN1608, and RN1609, provided their internal resistor ratios and electrical ratings meet the original circuit design constraints.