RN1607(TE85L,F)

RN1607(TE85L,F)

$0.31
  • Description:TRANS 2NPN PREBIAS 0.3W SM6
  • Series:-

SKU:04ed4522ef54 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.3W SM6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SM6

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RN1607(TE85L,F)

Overview

The RN1607(TE85L,F) is a dual NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with associated bias resistors into a single surface-mount package, specifically the SM-6 configuration. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 100mA. Internal resistance values include a base resistor (R1) of 22 kOhms and an emitter resistor (R2) of 47 kOhms. The unit supports a maximum power dissipation of 300mW and operates within a temperature range from -55°C to +150°C, ensuring reliability in compact electronic designs.

Feature Summary

  • Integrates dual NPN transistors with pre-biasing resistors to reduce component count
  • Utilizes ultra-super-mini SM-6 surface mount packaging for space efficiency
  • Designed for high-speed switching applications with a transition frequency of 250MHz

Applications

  • Switching circuits requiring compact form factors
  • Inverter circuit interfaces
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles during assembly. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dual NPN configuration with fixed bias ratios is required. The 22k/47k resistor combination suits general logic interface applications. Compare power dissipation limits against thermal constraints in dense PCB layouts. Verify that the 50V breakdown voltage meets the system's operational requirements.

Part Context

This component belongs to Toshiba's RN series of Bias Resistor Built-In Transistors. These devices are engineered to simplify circuit design by replacing discrete transistors and multiple resistors with a single integrated package. The series offers various resistance combinations and package types to accommodate different current and voltage requirements in consumer and industrial electronics.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic BRT replacements may differ in hFE characteristics or internal resistance tolerances. Validate pinout compatibility and thermal performance before implementing any alternative part numbers.

RN1607(TE85L,F)RN1607(TE85L,F)
$0.31
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