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The RN1607(TE85L,F) is a dual NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with associated bias resistors into a single surface-mount package, specifically the SM-6 configuration. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 100mA. Internal resistance values include a base resistor (R1) of 22 kOhms and an emitter resistor (R2) of 47 kOhms. The unit supports a maximum power dissipation of 300mW and operates within a temperature range from -55°C to +150°C, ensuring reliability in compact electronic designs.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles during assembly. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a dual NPN configuration with fixed bias ratios is required. The 22k/47k resistor combination suits general logic interface applications. Compare power dissipation limits against thermal constraints in dense PCB layouts. Verify that the 50V breakdown voltage meets the system's operational requirements.
This component belongs to Toshiba's RN series of Bias Resistor Built-In Transistors. These devices are engineered to simplify circuit design by replacing discrete transistors and multiple resistors with a single integrated package. The series offers various resistance combinations and package types to accommodate different current and voltage requirements in consumer and industrial electronics.
Consult official Toshiba substitution guides for verified equivalents. Generic BRT replacements may differ in hFE characteristics or internal resistance tolerances. Validate pinout compatibility and thermal performance before implementing any alternative part numbers.