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The RN1608(TE85L,F) is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an SM6 surface-mount package. Key electrical specifications include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a base resistor (R1) of 22 kΩ and an emitter resistor (R2) of 47 kΩ. Maximum power dissipation is rated at 300mW, with a DC current gain (hFE) minimum of 80 at 10mA and 5V.
Verify the complete part number including the suffix TE85L,F against official Toshiba documentation to ensure correct packaging and lead time specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to ordering. Cross-reference distributor listings with the manufacturer's datasheet to validate authenticity and avoid counterfeit components.
Select this component when a dual NPN configuration with specific 22kΩ and 47kΩ bias resistors is required. Ensure the 50V voltage rating and 100mA current capacity meet the target circuit demands. Consider the SM6 package dimensions for PCB layout constraints and verify thermal management capabilities for the 300mW power dissipation limit under operating conditions.
This device belongs to the RN1607-09 series of bias resistor built-in transistors from Toshiba. These components utilize epitaxial planar processes to provide high reliability in small packages. The series is designed to simplify circuit design by replacing discrete transistors and external biasing resistors with a single integrated solution.
Consult official Toshiba substitution guides for verified equivalents. Generic replacements may differ in internal resistor values or hFE characteristics.