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The RN1609(TE85L,F) is a dual NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors into a single surface-mount package, specifically the SM6 (SOT-457) configuration. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistance values are typically 22kΩ for R1 and 47kΩ for R2. Key electrical characteristics include a DC current gain (hFE) of at least 80 at 10mA/5V, a saturation voltage of 300mV max at 250µA base current, and a transition frequency of 250MHz. Power dissipation is rated at 300mW.
Verify the exact ordering code including the suffix TE85L,F against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the specific part number with authorized distributors to validate authenticity and supply chain integrity.
Select this component when a dual NPN configuration with fixed bias ratios is required for space-constrained designs. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Verify that the integrated resistor values align with the driving logic levels and desired operating points of the target application circuit.
This component belongs to the RN16xx series of Bias Resistor Built-in Transistors from Toshiba. These devices are designed to replace discrete transistor and resistor combinations, thereby reducing printed circuit board area and assembly costs. The series offers various resistance combinations tailored for different interface and driver applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official documentation or authorized distributor databases for verified equivalent components with matching pinouts and electrical specifications.