RN1610(TE85L,F)

Overview

The RN1610(TE85L,F) is a dual NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal base resistors in an SM6 package, offering a compact solution for switching applications. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. Internal resistance values are specified as 4.7 kΩ for the base resistor and infinity for the emitter resistor. The component supports a maximum power dissipation of 300 mW and operates at frequencies up to 250 MHz.

Feature Summary

• Integrates dual NPN transistors with pre-biased internal resistors to simplify circuit design
• Provides high-speed switching capabilities suitable for digital logic interfaces
• Offers a compact surface-mount form factor for space-constrained PCB layouts

Applications

• General-purpose digital switching circuits
• Logic level interface between microcontrollers and peripheral devices
• Driver stages for low-power loads in consumer electronics

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's official datasheet to confirm lead-free compliance and reel packaging specifications. Ensure that the SM6 package dimensions match the target footprint requirements. Cross-reference the internal resistor values with the application schematic to confirm compatibility with the driving source impedance. Confirm RoHS status through the authorized distributor's documentation prior to final procurement.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. The 4.7 kΩ base resistor value is suitable for standard TTL or CMOS logic levels. Consider the 300 mW power dissipation limit relative to the thermal environment. The SM6 package offers a balance between pin count and board area. Evaluate the 250 MHz frequency response against the signal speed requirements of the target application.

Part Context

This part belongs to the RN16xx series of Bias Resistor Built-in Transistors from Toshiba. These components are designed to replace discrete resistor-transistor networks, simplifying assembly and improving reliability. The RN1610 specifically utilizes an NPN-NPN configuration, distinguishing it from PNP or complementary variants within the same product family.

Replacement Considerations

Public confirmed substitute: PUMH16,115 (Nexperia USA Inc.). Verify electrical parameters and pinout compatibility before substitution.