RN1611(TE85L,F)

Overview

The RN1611(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors into a single surface-mount package, specifically the SMV-5 configuration. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA per element. Internal resistance values are typically set at 4.7 kΩ for R1 and 4.7 kΩ for R2. With a maximum power dissipation of 300mW and a transition frequency of 200MHz, it is designed for compact digital switching applications.

Feature Summary

• Integrates dual NPN transistors with pre-biasing resistors to reduce component count
• Utilizes SMV-5 surface-mount packaging for space-efficient circuit board layout
• Provides stable switching performance through integrated base and emitter resistors

Applications

• Digital interface circuits requiring level shifting or buffering
• Driver circuits for low-power loads in consumer electronics
• Switching applications in portable devices where board space is limited

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's latest datasheet to confirm tape-and-reel specifications and lead-free compliance status. Ensure that the ordering quantity aligns with standard reel sizes provided by authorized distributors. Cross-reference the part number with official Toshiba documentation to validate availability and manufacturing origin before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with fixed biasing is required to simplify schematic design. Compare the 4.7kΩ internal resistance values against circuit drive requirements to ensure adequate base current. Evaluate the 300mW power dissipation limit relative to the expected thermal environment and duty cycle of the application to prevent overheating during operation.

Part Context

This part belongs to the RN series of bias resistor built-in transistors from Toshiba. These components are engineered to replace discrete transistor-resistor networks, thereby reducing assembly costs and PCB area. The RN1611 variant specifically offers dual NPN channels, distinguishing it from single-channel or PNP-only counterparts within the same product family.

Replacement Considerations

Potential substitutes include other dual NPN BRTs in SMV-5 packages with similar 50V/100mA ratings. Verify equivalent internal resistance values and pinout compatibility before substitution. Consult Toshiba's official replacement guide for cross-reference data.