RN1701JE(TE85L,F)

Overview

The RN1701JE(TE85L,F) is a Bias Resistor Built-in Transistor (BRIT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN epitaxial transistors with bias resistors into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 100 mW. Internal resistor values are 4.7 kΩ for both R1 and R2. Electrical characteristics include a minimum DC current gain of 30 and a transition frequency of 250 MHz.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to reduce component count
• Utilizes an Extreme-Super-Mini 5-pin package for compact equipment manufacturing
• Designed for switching, inverter, interface, and driver circuit applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and lead time requirements. Ensure compliance with RoHS directives and environmental regulations applicable to the target market before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. The 4.7 kΩ resistor values suit standard logic interfacing. Verify that the 100 mA current rating and 100 mW power dissipation meet the thermal and load demands of the specific application design.

Part Context

This part belongs to the RN1701JE~RN1706JE series of Silicon NPN Epitaxial Type BRITs. It is complementary to the PNP RN2701JE~RN2706JE series. All devices in this family share the same 5-pin package form factor but differ in internal resistor ratios and values.

Replacement Considerations

No public substitute part numbers are documented in the provided source material.