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The RN1701,LF is a dual NPN pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors into an Extreme-Super-Mini (USV) package, specifically identified as 5-TSSOP, SC-70-5, or SOT-353. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. Internal resistor values are fixed at R1=4.7kΩ and R2=4.7kΩ. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA/5V, a maximum saturation voltage of 300mV at 250µA/5mA, and a transition frequency of 250MHz. Maximum power dissipation is rated at 200mW.
Verify the specific suffix against official Toshiba documentation, as variations such as TE85L may indicate tape-and-reel packaging configurations rather than functional differences. Confirm RoHS compliance status and moisture sensitivity level (MSL 1) prior to procurement to ensure compatibility with standard surface-mount reflow soldering processes.
Select this component when a dual NPN configuration with integrated base and emitter resistors is required for space-constrained designs. The fixed 4.7kΩ resistor values suit general-purpose switching applications. Ensure the 50V voltage rating and 100mA current capacity align with the target circuit requirements before finalizing the bill of materials.
The RN1701 belongs to the RN17xxJE family of silicon NPN epitaxial type transistors utilizing Toshiba's PCT process. This series is designed to complement the RN27xxJE PNP counterparts, offering a complete solution for complementary push-pull or differential amplifier stages within minimal footprint constraints.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' dual NPN pre-biased arrays.