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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.1W ESV
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
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Overview
The RN1702JE(TE85L,F) is a dual NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two transistors into an Extreme-Super-Mini 5-pin package, featuring internal bias resistors R1 and R2 of 10 kΩ each. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (PC) of 100 mW. The device operates within a junction temperature range of -55°C to 150°C and exhibits a transition frequency (fT) of 250 MHz.
Feature Summary
- Dual NPN configuration integrated into a compact 5-pin package to reduce component count and assembly costs.
- Built-in bias resistors simplify circuit design for switching, inverter, interface, and driver applications.
- High-speed performance with a transition frequency of 250 MHz suitable for digital signal processing.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and lead time requirements. Ensure compliance with RoHS directives and environmental regulations relevant to the target market. Cross-reference the manufacturer part number with distributor codes to prevent sourcing errors during procurement.
Selection Notes
Select this component when a dual NPN BRT with 10 kΩ input and feedback resistors is required. Compare the 100 mW power dissipation limit against thermal constraints in the final application. Consider the ESV-5 package dimensions for PCB layout compatibility and verify that the 50 V voltage rating exceeds the maximum operating voltage of the circuit.
Part Context
This component belongs to the RN1701JE through RN1706JE series, which share identical electrical characteristics and pinouts but differ in internal resistor values. The RN1702JE specifically utilizes 10 kΩ resistors for both R1 and R2, distinguishing it from other variants like the RN1701JE (4.7 kΩ) or RN1703JE (22 kΩ).
Replacement Considerations
Complementary PNP versions are available in the RN2701JE to RN2706JE series. Direct substitutes must match the 10 kΩ resistor ratio and 50 V/100 mA ratings while maintaining the 5-pin SMD form factor.
