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The RN1702,LF is a dual NPN pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors into a single surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, and a maximum saturation voltage of 300 mV at 250 µA base current and 5 mA collector current. The unit features a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. Internal resistor values are specified as R1 = 10 kΩ and R2 = 47 kΩ.
Verify the specific suffix against official Toshiba documentation to confirm exact resistor configurations and package variations. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the ordering code matches the required tape-and-reel or cut-tape format for automated placement systems.
Select this component when a dual NPN configuration with fixed bias resistors is required for space-constrained designs. Compare internal resistance values against circuit requirements to ensure proper base drive characteristics. Verify that the 250 MHz transition frequency meets the speed requirements of the target application.
The RN1702,LF belongs to the RN17xx series of pre-biased transistors from Toshiba. This series utilizes an Extreme-Super-Mini package to incorporate two devices in a five-pin footprint. It serves as a complementary counterpart to the PNP RN27xx series, offering a standardized solution for dual NPN biasing needs in consumer and industrial electronics.
Publicly confirmed substitute part numbers for the RN1702,LF were not identified in the provided source material. Consult official Toshiba cross-reference guides or distributor databases for verified equivalents.