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The RN1703JE(TE85L,F) is a Silicon NPN Epitaxial Bias Resistor Built-in Transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors (Q1, Q2) with bias resistors into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 100 mW. For the RN1703JE variant, both integrated resistors R1 and R2 are specified at 22 kΩ. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as reel quantity or tape specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the application does not fall under unintended use restrictions defined in the datasheet.
Select this component when a dual NPN transistor configuration with fixed 22kΩ bias resistors is required. Verify that the 50V collector-emitter voltage and 100mA current ratings align with the circuit design. Consider the Extreme-Super-Mini package dimensions for PCB layout constraints.
This part belongs to the RN1701JE through RN1706JE series from Toshiba. These devices share the same physical package and general electrical characteristics but differ in their internal resistor values. The RN1703JE specifically utilizes 22kΩ resistors for both R1 and R2.
Check for direct equivalents within the RN1701JE-RN1706JE family if different resistor ratios are acceptable. Verify pinout compatibility and absolute maximum ratings before substituting with components from other manufacturers.