RN1703JE(TE85L,F)

RN1703JE(TE85L,F)

$0.31
  • Description:TRANS 2NPN PREBIAS 0.1W ESV
  • Series:-

SKU:f85820d7d5a6 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W ESV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-553
  • Supplier Device Package:ESV

Download product information

RN1703JE(TE85L,F)

Overview

The RN1703JE(TE85L,F) is a Silicon NPN Epitaxial Bias Resistor Built-in Transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors (Q1, Q2) with bias resistors into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 100 mW. For the RN1703JE variant, both integrated resistors R1 and R2 are specified at 22 kΩ. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors in a compact 5-pin package to reduce parts count and assembly costs.
  • Designed for switching, inverter, interface, and driver circuits to enable more compact equipment manufacturing.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as reel quantity or tape specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the application does not fall under unintended use restrictions defined in the datasheet.

Selection Notes

Select this component when a dual NPN transistor configuration with fixed 22kΩ bias resistors is required. Verify that the 50V collector-emitter voltage and 100mA current ratings align with the circuit design. Consider the Extreme-Super-Mini package dimensions for PCB layout constraints.

Part Context

This part belongs to the RN1701JE through RN1706JE series from Toshiba. These devices share the same physical package and general electrical characteristics but differ in their internal resistor values. The RN1703JE specifically utilizes 22kΩ resistors for both R1 and R2.

Replacement Considerations

Check for direct equivalents within the RN1701JE-RN1706JE family if different resistor ratios are acceptable. Verify pinout compatibility and absolute maximum ratings before substituting with components from other manufacturers.

RN1703JE(TE85L,F)RN1703JE(TE85L,F)
$0.31
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