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The RN1703,LF is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal base resistors into an Extreme-Super-Mini USV package (5-TSSOP, SC-70-5, SOT-353). The device supports a maximum collector current of 100mA and a collector-emitter voltage of 50V. Internal resistors are configured as R1=22kΩ and R2=47kΩ. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA/5V, a maximum Vce saturation of 300mV at 250µA/5mA, and a transition frequency of 250MHz. Maximum power dissipation is 200mW.
Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging type and compliance status. Confirm availability status as distribution listings may vary. Ensure the selected variant matches the required pinout and resistance values for the target application design.
Select this component when a dual NPN configuration with fixed bias resistors is required to minimize board space. Verify that the 22kΩ and 47kΩ internal resistor values align with the driving source requirements. Ensure the 250MHz transition frequency meets the signal speed needs of the intended switching or interface application.
This part belongs to the RN17xxJE series of Bias Resistor Built-in Transistors (BRBTs). These devices utilize Toshiba's PCT process to combine NPN epitaxial transistors with resistors in a single package. The series is designed to replace discrete transistor-resistor combinations, reducing assembly costs and enabling more compact electronic equipment manufacturing.
Consult official Toshiba cross-reference data for verified substitutes. Generic equivalents may differ in internal resistor tolerances or hFE characteristics. Verify pin compatibility and thermal performance before substitution.