RN1704JE(TE85L,F)

Overview

The RN1704JE(TE85L,F) is a dual NPN epitaxial planar Bias Resistor Built-in Transistor (BRIT) from Toshiba Semiconductor and Storage. It integrates two transistors with bias resistors into an ESV-5 package. Key electrical parameters include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 100 mW. The internal resistors are both 47 kΩ. The device features a transition frequency of 250 MHz and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors in a single compact package.
• Reduces printed circuit board space requirements and simplifies assembly processes.
• Provides stable switching characteristics through integrated resistor networks.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and lead time requirements. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the ESV-5 package dimensions match your PCB footprint design constraints.

Selection Notes

Select this component when a dual NPN configuration with high-value base resistors (47 kΩ) is required for interface applications. Compare the 100 mW power dissipation limit against thermal management capabilities in the target enclosure. Evaluate the 250 MHz transition frequency against signal speed requirements to ensure adequate performance margins.

Part Context

This part belongs to the RN1701JE–RN1706JE series of NPN BRITs. These devices share identical pinouts and maximum ratings but differ in internal resistor values. The RN1704JE specifically utilizes symmetric 47 kΩ resistors for both channels, distinguishing it from asymmetric variants like the RN1705JE.

Replacement Considerations

Check for direct cross-references from other manufacturers offering dual NPN BRITs in ESV-5 packages with 47 kΩ resistors. Verify pin compatibility and electrical parameter equivalence, particularly VCEO and IC limits, before substitution.

FAQ

What are the internal resistor values for the RN1704JE?

Both internal bias resistors (R1 and R2) are 47 kΩ.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.

Does this device support PNP operation?

No, the RN1704JE contains only NPN transistors. Complementary PNP versions are available in the RN2701JE–RN2706JE series.