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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.1W ESV
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
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Overview
The RN1705JE(TE85L,F) is a dual NPN epitaxial planar Bias Resistor Built-in Transistor (BRIT) manufactured by Toshiba Semiconductor and Storage. It integrates two transistors into an Extreme-Super-Mini 5-pin package, featuring internal bias resistors to reduce component count. Key electrical parameters include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 100 mW. The device incorporates a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter resistor (R2), with a minimum DC current gain of 80 at 10 mA. Transition frequency reaches 250 MHz, and it operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual NPN configuration integrated into a compact 5-pin ESV-5 package for space-constrained designs.
- Built-in bias resistors eliminate external components, simplifying circuit layout and reducing assembly costs.
- High-speed switching capability supported by a transition frequency of 250 MHz.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and lead-free status. Ensure compliance with RoHS directives as indicated in manufacturer specifications. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing procurement plans.
Selection Notes
Select this component when a dual NPN digital transistor with asymmetric bias resistors is required. The 2.2 kΩ input resistance suits low-current drive applications. Verify that the 100 mW power dissipation rating accommodates thermal constraints in the target enclosure design.
Part Context
This part belongs to the RN1701JE through RN1706JE series of NPN BRITs. All members share identical pinouts and maximum ratings but differ in internal resistor values. The RN1705JE specifically provides a 2.2 kΩ R1 value, distinguishing it from other variants in the family.
Replacement Considerations
Complementary PNP equivalents are available in the RN2701JE to RN2706JE series. Direct substitution requires verifying matching resistor ratios and ensuring polarity compatibility within the circuit topology.
FAQ
What are the specific values of the built-in resistors?
The RN1705JE contains a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 47 kΩ.
What is the maximum collector-emitter voltage?
The absolute maximum rating for collector-emitter voltage (VCEO) is 50 V.
How does the resistor ratio affect performance?
The resistor ratio (R1/R2) is typically 0.0468, influencing the input impedance and saturation characteristics during switching operations.
