RN1705,LF

Overview

The RN1705,LF is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors into an Ultra-Super-Mini (USV) package, specifically identified as SOT-353 or 5-TSSOP. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, and a maximum saturation voltage of 300 mV at 250 µA base current and 5 mA collector current. The internal bias network consists of a base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ. The component operates with a transition frequency of 250 MHz and has a maximum power dissipation of 200 mW.

Feature Summary

• Integrates two NPN transistors with fixed bias resistors in a single compact surface-mount package to reduce component count.
• Features a defined internal resistance network with R1 at 10 kΩ and R2 at 47 kΩ for standardized interface applications.
• Designed for high-frequency switching operations with a transition frequency of 250 MHz.

Applications

• Switching circuits requiring compact layout solutions
• Inverter circuits for digital logic interfaces
• Driver circuits for low-power signal processing

Procurement Notes

Verify the specific suffix and tape-and-reel configuration when ordering, as packaging variants may exist. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability can fluctuate. Ensure the USV/SOT-353 footprint matches the target PCB design constraints before finalizing procurement.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to minimize board space. The 10 kΩ/47 kΩ resistor ratio is suitable for standard logic level interfacing. Compare against complementary PNP models like the RN2705 series if both polarities are needed in a design. Verify that the 100 mA current rating meets the load requirements of the specific application circuit.

Part Context

The RN1705,LF belongs to Toshiba's RN17xxJE/RN17xxLF family of bias resistor built-in transistors. These devices utilize a PCT process for silicon NPN epitaxial types. The 'LF' suffix typically denotes lead-free composition compliant with environmental directives. This part is part of a broader series offering various resistor values to accommodate different drive requirements across multiple packages.

Replacement Considerations

Direct functional substitutes within the same family include RN1701JE through RN1706JE variants, which share the USV package but differ in internal resistor values. Complementary PNP equivalents in the same package are found in the RN270x series. Cross-reference pinouts carefully when substituting with generic dual NPN arrays, as internal resistor configurations vary significantly between manufacturers.