RN1706JE(TE85L,F)

RN1706JE(TE85L,F)

$0.32
  • Description:TRANS 2NPN PREBIAS 0.1W ESV
  • Series:-

SKU:770273a82c9a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W ESV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-553
  • Supplier Device Package:ESV

Download product information

RN1706JE(TE85L,F)

Overview

The RN1706JE(TE85L,F) is a Silicon NPN Epitaxial Bias Resistor Built-in Transistor (BRIT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 100 mW. Internal resistor values are R1 = 4.7 kΩ and R2 = 47 kΩ. Electrical characteristics include a DC current gain (hFE) of 80 minimum at IC=10mA, VCE=5V, and a transition frequency (fT) of 250 MHz typical.

Feature Summary

  • Integrates two NPN transistors and bias resistors in a single compact package to reduce component count.
  • Utilizes PCT process technology for high-speed switching performance.
  • Designed for interface circuits and driver applications requiring simplified biasing.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and environmental compliance status. Ensure the procurement channel provides valid traceability for semiconductor components intended for commercial production.

Selection Notes

Select this component when a dual NPN configuration with fixed bias ratios is required. The 4.7kΩ/47kΩ resistor combination suits specific logic level driving needs. Verify that the 100mA collector current and 50V voltage ratings align with the target circuit load requirements.

Part Context

This part belongs to the RN1701JE through RN1706JE series of Bias Resistor Built-in Transistors. Each model in the series offers different internal resistor combinations while sharing the same physical package and general electrical characteristics. The RN1706JE specifically pairs a 4.7kΩ base resistor with a 47kΩ emitter resistor.

Replacement Considerations

Check for direct equivalents within the RN1701JE-RN1706JE family if resistor values differ. Cross-reference with complementary PNP types like the RN2706JE if polarity inversion is needed. Verify pinout compatibility before substituting with other manufacturers' BRITs.

RN1706JE(TE85L,F)RN1706JE(TE85L,F)
$0.32
Buy Now