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The RN1706JE(TE85L,F) is a Silicon NPN Epitaxial Bias Resistor Built-in Transistor (BRIT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 100 mW. Internal resistor values are R1 = 4.7 kΩ and R2 = 47 kΩ. Electrical characteristics include a DC current gain (hFE) of 80 minimum at IC=10mA, VCE=5V, and a transition frequency (fT) of 250 MHz typical.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and environmental compliance status. Ensure the procurement channel provides valid traceability for semiconductor components intended for commercial production.
Select this component when a dual NPN configuration with fixed bias ratios is required. The 4.7kΩ/47kΩ resistor combination suits specific logic level driving needs. Verify that the 100mA collector current and 50V voltage ratings align with the target circuit load requirements.
This part belongs to the RN1701JE through RN1706JE series of Bias Resistor Built-in Transistors. Each model in the series offers different internal resistor combinations while sharing the same physical package and general electrical characteristics. The RN1706JE specifically pairs a 4.7kΩ base resistor with a 47kΩ emitter resistor.
Check for direct equivalents within the RN1701JE-RN1706JE family if resistor values differ. Cross-reference with complementary PNP types like the RN2706JE if polarity inversion is needed. Verify pinout compatibility before substituting with other manufacturers' BRITs.