RN1706,LF

Overview

The RN1706,LF is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors into an Ultra-Super-Mini (USV) surface-mount package. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a maximum Vce saturation voltage of 300mV at 250µA base current and 5mA collector current. The unit features a transition frequency of 250MHz, a maximum power dissipation of 200mW, and a collector cutoff current of 500nA. Internal bias resistances are specified as R1 = 10 kΩ and R2 = 47 kΩ.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors to reduce component count and simplify circuit design.
• Utilizes an Ultra-Super-Mini (USV) surface-mount package for compact equipment manufacturing.
• Offers complementary functionality within the RN1701JE to RN1706JE series with diverse resistance values.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific manufacturer part number RN1706,LF against official Toshiba Semiconductor and Storage documentation to confirm availability and exact specifications. Ensure that any ordering suffixes do not alter the functional characteristics unless explicitly stated in the source datasheet. Cross-reference with authorized distributors for accurate stock status and lead times.

Selection Notes

Select the RN1706,LF when a dual NPN configuration with fixed 10kΩ and 47kΩ bias resistors is required. This component is suitable for applications demanding simplified assembly and reduced parts count in space-constrained designs. Verify that the 50V voltage rating and 100mA current capacity meet the specific circuit requirements.

Part Context

The RN1706,LF belongs to the RN170xJE series of Bias Resistor Built-in Transistors (BRTs). These devices are designed to replace discrete transistor and resistor combinations, thereby lowering assembly costs and enabling more compact electronic equipment. The series offers various resistance values to suit different circuit designs.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN1706,LF were not identified in the provided reference material. Consult official Toshiba Semiconductor and Storage documentation or authorized distributor databases for verified equivalent components.