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Product Detailed Parameters
- Description：NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
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Overview
The RN1707JE(TE85L,F) is a Bias Resistor Built-in Transistor (BRIT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage of 50V, a collector current of 100mA, and a total power dissipation of 100mW. Internal resistor values are R1=10kΩ and R2=47kΩ. Electrical characteristics include a DC current gain of 80 at IC=10mA, VCE=5V, and a transition frequency of 250MHz.
Feature Summary
- Integrates two NPN transistors and bias resistors in a single compact package to reduce component count.
- Designed for switching, inverter circuit, interface circuit, and driver circuit applications.
- Complementary to the RN2707JE to RN2709JE PNP series.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel specifications or tape dimensions. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the Extreme-Super-Mini package footprint matches your PCB layout requirements.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required to minimize board space and assembly costs. Compare internal resistor values (R1=10kΩ, R2=47kΩ) against circuit design needs. Consider the complementary RN2707JE~RN2709JE series if PNP equivalents are needed for push-pull or differential configurations.
Part Context
This part belongs to the RN1707JE~RN1709JE family of Silicon NPN Epitaxial Type BRITs utilizing Toshiba's PCT process. These devices share the same 5-pin package and general electrical ratings but differ in internal resistor values to suit various input impedance requirements within the same product line.
Replacement Considerations
Direct substitutes include RN1707JE without suffixes or other variants like RN1708JE and RN1709JE if different resistor ratios are acceptable. Verify pinout compatibility and absolute maximum ratings before substitution.
