RN1708JE(TE85L,F)

Overview

The RN1708JE is a dual NPN bias resistor built-in transistor from Toshiba, housed in an Extreme-Super-Mini 5-pin package. It integrates two transistors with specific bias resistors to reduce component count and assembly costs. Key electrical parameters at 25°C include a collector-emitter voltage of 50 V, collector current of 100 mA, and collector power dissipation of 100 mW. The input resistor R1 has a typical value of 22 kΩ, while the output resistor R2 is typically 47 kΩ. The device features a DC current gain (hFE) of 80 minimum, a transition frequency of 250 MHz typical, and a collector-emitter saturation voltage of 0.1 V typical at IC=5 mA.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors into a single compact package to minimize parts count.
• Designed for switching, inverter, interface, and driver circuit applications to facilitate compact equipment manufacturing.
• Offers complementary functionality within the RN1707JE to RN1709JE series alongside the RN2707JE to RN2709JE PNP counterparts.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the exact ordering suffix TE85L,F against the manufacturer's current catalog to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS directives and environmental regulations relevant to your region before procurement. Confirm that the application does not constitute unintended use, such as aerospace or nuclear facilities, which voids liability. Review the latest reliability handbook for derating guidelines under heavy load conditions.

Selection Notes

Select the RN1708JE when a specific bias resistor ratio of approximately 2.14 (R1/R2) is required for the design. Compare the 22 kΩ input resistor value against other series members like the RN1707JE (10 kΩ) or RN1709JE (47 kΩ) to match impedance requirements. Consider the 50 V voltage rating and 100 mA current limit to ensure operation remains within absolute maximum ratings for the target application environment.

Part Context

This component belongs to the RN1707JE~RN1709JE family of Silicon NPN Epitaxial Type transistors utilizing Toshiba's P CT Process. These devices are part of a broader lineup that includes complementary PNP types (RN2707JE~RN2709JE). The series is engineered to provide flexible biasing options through varied resistor values while maintaining a standardized small-footprint package for space-constrained designs.

Replacement Considerations

Direct functional substitutes within the same series include the RN1707JE and RN1709JE, though their internal resistor values differ. Verify pinout compatibility and electrical characteristics against the original design requirements before substituting. No other external cross-model replacements are documented in the provided datasheet.