RN1708,LF

Overview

The RN1708,LF is a dual NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a maximum power dissipation of 200mW, a DC current gain of 80 at 10mA/5V, and a saturation voltage of 300mV at specific test conditions. Internal resistances are 22kΩ for the base and 47kΩ for the emitter.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
• Provides high-speed switching capability with a 250MHz transition frequency
• Offers low saturation voltage for efficient power management
• Utilizes compact surface-mount packaging for space-constrained applications

Applications

• General-purpose logic interface circuits
• Driver circuits for small-signal loads
• Switching applications in consumer electronics
• Signal level shifting between different voltage domains

Procurement Notes

Verify the exact suffix matches the required package type, as variations exist within the product family. Confirm that the 'LF' designation aligns with lead-free compliance requirements for your assembly process. Cross-reference the manufacturer part number with official distributor catalogs to ensure authenticity and traceability. Check for any specific handling instructions related to electrostatic discharge during storage and installation.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce board space and component count. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the 200mW power dissipation limit for thermal management. Verify compatibility with the target PCB footprint, specifically the SOT-353 (USV) package dimensions.

Part Context

This component belongs to Toshiba's series of Bias Resistor Built-in Transistors (BRT). These devices combine transistors and resistors into single packages to streamline circuit design. The RN1708 variant specifically provides a dual NPN configuration, distinguishing it from single or PNP variants within the same product line. It serves as a standard solution for general-purpose switching and amplification tasks.

Replacement Considerations

Compatible substitutes include the RN1608(TE85L,F), which offers similar electrical characteristics but utilizes an SM6 package instead of USV. The RN1904 series also provides dual NPN BRT options, though package and pinout differences must be verified before substitution. Always confirm pin compatibility and thermal performance when replacing with alternative manufacturers' parts.