RN1709JE(TE85L,F)

RN1709JE(TE85L,F)

  • Description:NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
  • Series:-

SKU:30d825e9b747 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-553
  • Supplier Device Package:ESV

Download product information

RN1709JE(TE85L,F)

Overview

The RN1709JE(TE85L,F) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors into an Extreme-Super-Mini 5-pin package, incorporating bias resistors to reduce component count and assembly costs. The device features a collector-emitter voltage of 50V, a collector current of 100mA, and a total power dissipation of 100mW. For the RN1709JE variant, the internal resistor values are R1 = 47 kΩ and R2 = 22 kΩ. It operates within a junction temperature range of -55°C to 150°C and offers a transition frequency of 250MHz.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors in a single compact package
  • Reduces printed circuit board space requirements and simplifies assembly processes
  • Provides complementary functionality to the RN2707JE through RN2709JE PNP series

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the intended application does not fall under Toshiba's restrictions for unintended use or high-reliability safety-critical systems without proper validation.

Selection Notes

Select the RN1709JE when a base-to-collector resistor ratio of approximately 2.14 is required for the specific logic interface design. Compare the 47kΩ input resistance against other models like the RN1707JE or RN1708JE to ensure compatibility with the driving source impedance. Verify that the 50V collector-emitter breakdown voltage meets the maximum operating voltage requirements of the target circuit.

Part Context

This component belongs to the RN1707JE to RN1709JE family of Silicon NPN Epitaxial Type BRTs utilizing the P CT Process. These devices are designed as compact alternatives to discrete transistor and resistor combinations. The family shares identical pinouts and absolute maximum ratings, differing primarily in the internal resistor values to accommodate various biasing needs in digital switching applications.

Replacement Considerations

Direct functional equivalents within the same package include the RN1707JE and RN1708JE, provided their specific resistor values (10kΩ/47kΩ and 22kΩ/47kΩ respectively) match the circuit design requirements. Cross-reference with the complementary RN270xJE PNP series if a P-channel solution is needed.

RN1709JE(TE85L,F)RN1709JE(TE85L,F)

Click on the inquiry