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The RN1709,LF is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with pre-bias resistors into a single surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a DC current gain (hFE) minimum of 80 at 10mA and 5V, and a transition frequency of 250MHz. The component features a low saturation voltage of 300mV at 250µA base current and 5mA collector current. It is housed in an SOT-553 package, also designated as USV, with a maximum power dissipation of 200mW.
Verify the specific ordering suffix when sourcing this component, as variations such as TE85L may indicate different packaging formats like tape and reel or cut tape. Confirm RoHS compliance status and moisture sensitivity level requirements against the latest manufacturer datasheet before finalizing procurement specifications.
Select the RN1709,LF for designs requiring dual NPN switching with integrated biasing in a compact footprint. Ensure the required base resistance values match the internal configuration specified in the datasheet. Verify that the 50V voltage rating and 100mA current capacity exceed the maximum operational loads in the target application.
This component belongs to Toshiba's RN series of Bias Resistor Built-in Transistors. These devices are designed to replace discrete transistor and resistor networks, reducing board space and assembly complexity. The RN1709 variant specifically provides a dual NPN configuration suitable for complementary switching tasks.
Publicly confirmed substitute part numbers for the RN1709,LF were not identified in the provided source material. Engineers should consult official cross-reference lists from Toshiba Semiconductor and Storage for verified alternatives.