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Product Detailed Parameters
- Description：NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
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Overview
The RN1710JE(TE85L,F) is a Silicon NPN Epitaxial Type Bias Resistor built-in Transistor manufactured by Toshiba Semiconductor and Storage. It incorporates two devices into an Extreme-Super-Mini (5 pin) package, reducing parts count and assembly cost. Absolute maximum ratings include a collector-emitter voltage of 50 V, collector current of 100 mA, and collector power dissipation of 100 mW. Electrical characteristics at 25°C specify a DC current gain (hFE) of 120 to 700, a transition frequency (fT) of 250 MHz, and an input resistor (R1) value of 4.7 kΩ for the RN1710JE variant.
Feature Summary
- Incorporates two NPN transistors with built-in bias resistors into a single 5-pin package to reduce component count.
- Designed for switching, inverter, interface, and driver circuit applications.
- Complementary to the RN2710JE to RN2711JE PNP series.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications or marking codes. Confirm RoHS compliance status directly with the supplier before procurement. Ensure the selected part number matches the required resistor value configuration for the intended design.
Selection Notes
Select this component when a compact solution for dual NPN switching is required. The integrated bias resistor simplifies circuit design by eliminating external base resistors. Verify that the 50 V collector-emitter voltage and 100 mA collector current meet the load requirements. Consider the complementary RN2710JE series if PNP functionality is also needed.
Part Context
This component belongs to the RN17xxJE series of Bias Resistor built-in Transistors from Toshiba. These devices are designed to replace discrete transistor and resistor combinations, facilitating miniaturization in electronic equipment. The RN1710JE specifically features a 4.7 kΩ input resistor, while the RN1711JE variant offers different resistance values within the same package.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's documentation for potential cross-references or alternative components with similar electrical characteristics and package dimensions.
