RN1710,LF

Overview

The RN1710,LF is a dual NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with base resistors in a single surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Internal biasing includes a 4.7 kΩ base resistor for one transistor and an infinite resistance (open) for the other. Key electrical specifications include a transition frequency of 250MHz, a DC current gain of 120 at 1mA/5V, and a saturation voltage of 300mV at specified currents. The component operates within a power dissipation limit of 200mW and utilizes a USV (SOT-353) package.

Feature Summary

• Integrates dual NPN transistors with pre-biased internal resistors to simplify circuit design
• Provides high-speed switching capability with a 250MHz transition frequency
• Offers low saturation voltage for efficient signal handling
• Utilizes compact surface-mount packaging for space-constrained applications

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Signal level shifting applications

Procurement Notes

Verify the specific ordering suffix, such as TE85L, when sourcing components to ensure compliance with required tape-and-reel packaging quantities and manufacturing standards. Confirm that the part number matches the exact electrical characteristics defined in the official Toshiba datasheet, particularly regarding the integrated resistor values and package type, to avoid substitution errors during procurement.

Selection Notes

Select this component when a dual NPN configuration with asymmetric biasing is required. The inclusion of a 4.7 kΩ resistor on one channel and an open circuit on the other allows for flexible integration into mixed-signal designs. Ensure the application voltage does not exceed the 50V rating and that thermal management accounts for the 200mW power dissipation limit within the USV package constraints.

Part Context

The RN1710 belongs to Toshiba's family of Bias Resistor Built-in Transistors (BRTs). These devices combine bipolar junction transistors with onboard biasing resistors to reduce external component count and PCB area. The RN1710 specifically provides a dual NPN solution, distinguishing it from single-transistor or PNP variants within the same product line, catering to applications requiring coordinated switching actions.

Replacement Considerations

Direct substitutes must match the dual NPN BRT configuration, 50V rating, 100mA current capacity, and SOT-353/USV package. Verify equivalent transition frequencies and internal resistor values (4.7kΩ/open) to maintain circuit performance without redesign.