RN1711JE(TE85L,F)

Overview

The RN1711JE is a Silicon NPN Epitaxial Type Bias Resistor built-in Transistor utilizing the PCT process. It integrates two NPN transistors with bias resistors into an Extreme-Super-Mini 5-pin package. Key electrical characteristics include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total collector power dissipation of 100 mW. The device features a minimum DC current gain (hFE) of 120 at 1 mA and 5 V, a transition frequency of 250 MHz, and a typical input resistor value of 10 kΩ.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors in a single compact package to reduce component count.
• Utilizes Toshiba's PCT process for high-speed switching performance.
• Designed for space-saving applications by minimizing assembly costs and board area.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that the selected variant matches the required input resistance tolerance and package marking codes for your design.

Selection Notes

Select this component when a dual NPN configuration with integrated base resistors is required for logic level shifting or signal inversion. Compare the 10 kΩ input resistance against circuit requirements to ensure proper drive current limitations. Consider the 50 V breakdown voltage and 100 mA current limits relative to the load conditions in the target application.

Part Context

This part belongs to the RN17xxJE series of pre-biased transistors manufactured by Toshiba Semiconductor and Storage. It serves as the NPN counterpart to the PNP RN27xxJE series. The JE suffix typically denotes a specific standard packaging format within this product line, distinct from other suffixes like TE85L which may indicate bulk or specific reel configurations.

Replacement Considerations

Direct functional equivalents include the RN1710JE, which shares identical electrical ratings but features a different input resistance value. Designers should verify pin compatibility and thermal derating curves when substituting between variants within the same family.

FAQ

What is the typical input resistance value for the RN1711JE?

The typical input resistance (R1) for the RN1711JE is 10 kΩ, with a range from 7 kΩ to 13 kΩ.

How many transistors are contained within the RN1711JE package?

The RN1711JE contains two independent NPN transistors (Q1 and Q2) integrated into a single 5-pin package.

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCEO) rating is 50 V.