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The RN1711,LF is a silicon NPN epitaxial type bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process for high-speed switching applications. The device integrates two NPN transistors in a common emitter configuration with built-in bias resistors within a single surface-mount package. Key electrical specifications include a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 50 V. The minimum DC current gain (hFE) is specified as 120 at 1 mA and 5 V. The component supports a maximum power dissipation of 0.1 W and operates up to a junction temperature of 150 °C.
Verify the specific suffix and packaging variant when ordering, as availability may vary between tape-and-reel and cut-tape formats. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as production status can change. Ensure the selected package matches the PCB footprint requirements for the SOT-353 or equivalent small outline form factor.
Select this component for designs requiring dual NPN switching with integrated base biasing to reduce external component count. Verify that the required hFE meets the minimum specification of 120 at the intended operating current. Ensure the thermal management plan accommodates the 0.1 W power dissipation limit in the chosen surface-mount package.
This part belongs to Toshiba's RN series of bias resistor built-in transistors, designed to replace multiple discrete components. It serves as a compact solution for digital logic interfacing and signal inversion tasks where space constraints and assembly efficiency are critical priorities in consumer and industrial electronics.
Check for complementary PNP variants like the RN2710 if both polarities are needed. Verify pinout compatibility with alternative manufacturers' dual NPN pre-biased transistors before substitution.