RN1711,LF

RN1711,LF

$0.20
  • Description:NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
  • Series:-

SKU:0ce68b138e81 Category: Brand:

  
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Product Detailed Parameters

  • Description:NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:USV

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RN1711,LF

Overview

The RN1711,LF is a silicon NPN epitaxial type bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process for high-speed switching applications. The device integrates two NPN transistors in a common emitter configuration with built-in bias resistors within a single surface-mount package. Key electrical specifications include a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 50 V. The minimum DC current gain (hFE) is specified as 120 at 1 mA and 5 V. The component supports a maximum power dissipation of 0.1 W and operates up to a junction temperature of 150 °C.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
  • Utilizes PCT process technology for enhanced switching performance
  • Configured as a common emitter dual element for interface and driver applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix and packaging variant when ordering, as availability may vary between tape-and-reel and cut-tape formats. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as production status can change. Ensure the selected package matches the PCB footprint requirements for the SOT-353 or equivalent small outline form factor.

Selection Notes

Select this component for designs requiring dual NPN switching with integrated base biasing to reduce external component count. Verify that the required hFE meets the minimum specification of 120 at the intended operating current. Ensure the thermal management plan accommodates the 0.1 W power dissipation limit in the chosen surface-mount package.

Part Context

This part belongs to Toshiba's RN series of bias resistor built-in transistors, designed to replace multiple discrete components. It serves as a compact solution for digital logic interfacing and signal inversion tasks where space constraints and assembly efficiency are critical priorities in consumer and industrial electronics.

Replacement Considerations

Check for complementary PNP variants like the RN2710 if both polarities are needed. Verify pinout compatibility with alternative manufacturers' dual NPN pre-biased transistors before substitution.

RN1711,LFRN1711,LF
$0.20
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