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Product Detailed Parameters
- Description：AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN1901FE,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in biasing resistors in an ES6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. It has a maximum power dissipation of 100mW and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Integrates dual NPN transistors with fixed internal biasing resistors to simplify circuit design.
- Automotive-grade reliability certified under AEC-Q101 standards for harsh environment operation.
- Compact ES6 surface-mount package optimized for space-constrained printed circuit board layouts.
Applications
- Automotive electronic control units requiring reliable switching functions.
- General-purpose digital logic interface circuits.
- Low-power signal switching applications in consumer electronics.
Procurement Notes
Verify the complete part number including the suffix against official Toshiba documentation to ensure correct packaging and variant selection. Confirm that the ES6 package matches the target footprint requirements. Check for specific automotive grade certifications if the application demands AEC-Q101 compliance. Ensure compatibility with existing assembly processes for surface-mount technology.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required. The 4.7kΩ resistor values suit standard logic level driving. Consider the 100mW power limit for thermal management. Compare against other RN190x variants if different resistance ratios or higher power ratings are needed. Verify the transition frequency meets the switching speed requirements of the target application.
Part Context
This part belongs to the RN1901 series of pre-biased transistor arrays from Toshiba. It shares the core transistor characteristics with the RN1901,LF(CT but differs in packaging and specific resistor configurations. The FE suffix typically denotes a specific tape and reel or packaging variation within the product line. It is distinct from the RN4901 which combines NPN and PNP types.
FAQ
What is the difference between RN1901FE,LXHF(CT and RN1901,LF(CT?
The primary differences lie in the package type and internal resistor values. The RN1901FE uses an ES6 package with 4.7kΩ biasing resistors, while the RN1901,LF uses a US6 package with a 4.7kΩ base resistor and a 1kΩ emitter resistor.
Is the RN1901FE,LXHF(CT suitable for automotive applications?
Yes, the datasheet indicates it holds AEC-Q101 qualification, making it suitable for automotive electronic systems.
What is the maximum power dissipation of this device?
The maximum power dissipation is specified as 100mW.
