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The RN1901FETE85LF is a dual NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors in a US6 surface-mount package. The device supports a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a total power dissipation of 200mW. Each channel features an input resistor (R1) of 4.7kΩ and an emitter resistor (R2) of 4.7kΩ. Key electrical characteristics include a DC current gain (hFE) of at least 30 at 10mA/5V, a transition frequency (fT) of 250MHz, and a collector-emitter saturation voltage of 300mV maximum at 5mA/0.25mA.
Verify the specific ordering suffix TE85L against the manufacturer's latest documentation to confirm packaging details such as reel size or tape specifications. Confirm RoHS compliance status directly with the supplier or official datasheet before finalizing procurement plans. Ensure the component meets all environmental regulations applicable to the target market.
Select this component when a dual NPN configuration with fixed bias ratios is required for space-constrained designs. The integrated 4.7kΩ input and emitter resistors are suitable for standard logic interface applications. Verify that the 50V breakdown voltage and 100mA current rating align with the specific load requirements of the intended application circuit.
This part belongs to the RN190x series of Bias Resistor Built-in Transistors from Toshiba. The series includes complementary PNP variants (RN2901 to RN2906). The RN1901 specifically denotes the NPN version with equal 4.7kΩ bias resistors. The TE85L suffix indicates the specific tape and reel packaging format used for automated surface-mount assembly.
Direct pin-compatible replacements within the same family include RN1902, RN1903, RN1904, RN1905, and RN1906, provided their respective bias resistor values match the circuit requirements. Complementary PNP equivalents are available in the RN2901 series.