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The RN1901,LF(CT is a dual Bias Resistor Built-in Transistor (BRT) containing two NPN silicon epitaxial transistors in a US6 surface-mount package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a total power dissipation of 200mW. The device features an input resistor (R1) of 4.7kΩ and an emitter resistor (R2) of 4.7kΩ. It exhibits a transition frequency of 250MHz and a DC current gain (hFE) of 30 at IC=10mA, VCE=5V.
Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm the exact tape-and-reel configuration. Ensure that the requested part number matches the required packaging format before finalizing procurement orders.
Select this component when a dual NPN BRT solution is required within a compact US6 footprint. Verify that the integrated 4.7kΩ resistor values align with the target logic levels and drive requirements. Confirm that the 50V voltage rating and 100mA current capacity are sufficient for the intended load conditions.
This component belongs to the RN190x series of Bias Resistor Built-in Transistors manufactured by Toshiba Semiconductor and Storage. The series includes complementary PNP variants (RN290x) and other configurations with different resistor ratios. The RN1901 specifically provides matched dual NPN devices with equal base and emitter resistors.
Direct pin-compatible replacements must be sourced from official Toshiba Semiconductor and Storage catalogs or verified distributor cross-reference lists. Ensure any substitute maintains the US6 package dimensions and identical electrical characteristics.