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The RN1901,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50V, a continuous collector current (Ic) of 100mA, and a transition frequency (fT) of 250MHz. The device features a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ. It has a maximum power dissipation of 100mW and meets AEC-Q101 automotive qualification standards.
Verify the exact suffix against official Toshiba documentation to confirm pinout compatibility and resistance values. Ensure the selected variant matches the required ES6 package dimensions for PCB layout. Confirm AEC-Q101 certification status if deploying in automotive environments. Cross-reference datasheet revision dates to ensure parameter consistency with existing designs.
Select this component when a dual NPN pre-biased solution is required in a compact SMD footprint. Compare R1 and R2 values against other variants like RN1901FE,LXHF(CT which shares the ES6 package but may differ in internal resistor configurations or thermal characteristics. Evaluate power dissipation limits relative to the application's thermal environment.
This part belongs to Toshiba's RN series of digital transistors, specifically designed as pre-biased arrays. It serves as a compact alternative to discrete BJT and resistor combinations. The RN1901 family typically includes variants with different resistor ratios and packaging options such as US6 and ES6 to suit various density and thermal requirements.
RN1901FE,LXHF(CT is a documented substitute within the same manufacturer lineup, sharing the ES6 package. Verify internal resistor values and hFE characteristics before substitution. No cross-manufacturer replacements are confirmed in the provided data.