RN1902FE,LF(CT

$0.26

Description：TRANS 2NPN PREBIAS 0.1W ES6
Series：-

SKU:ccf7f8c9df00 Category: Bipolar Transistor Arrays, Pre-Biased Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN PREBIAS 0.1W ES6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：50V
Resistor - Base (R1)：10kOhms
Resistor - Emitter Base (R2)：1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
pa_vce-saturation-max-ib-ic：
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：250MHz
Power - Max：100mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6

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RN1902FE,LF(CT

Overview

The RN1902FE,LF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with internal biasing resistors in a compact US6 surface-mount package (equivalent to SC-88 or SOT-363). The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistor values are specified as R1 = 10 kΩ and R2 = 10 kΩ. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 10mA and 5V, a transition frequency of 250MHz, and a maximum power dissipation of 200mW.

Feature Summary

Integrated dual NPN configuration with built-in base and emitter resistors for simplified circuit design.
High-speed switching capability supported by a 250MHz transition frequency.
Compact surface-mount packaging suitable for space-constrained applications.

Applications

General-purpose switching circuits
Driver stages for logic interfaces
Biasing networks in analog signal processing

Procurement Notes

Verify the specific suffix FE against official Toshiba documentation to confirm any distinct marking or handling requirements compared to standard LF variants. Ensure compatibility with RoHS3 directives if required by the target application environment. Confirm availability through authorized distributors as lead times may vary based on manufacturing schedules.

Selection Notes

Select this component when a dual NPN pre-biased solution with 10kΩ base and emitter resistors is required. Compare hFE and saturation voltage specifications against alternative RN series parts like RN1901 or RN1904 if different resistance ratios are needed. Ensure the US6 package footprint matches the PCB layout constraints.

Part Context

This part belongs to the RN19xx series of pre-biased transistor arrays from Toshiba. These devices combine transistors and resistors to reduce component count and board space. The RN1902 variant specifically features equal 10kΩ resistors, distinguishing it from other series members with different resistance values.