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The RN1902FE,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal biasing resistors, each having a typical resistance of 10 kΩ. The device features a collector-emitter breakdown voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. It operates at a transition frequency of 250 MHz with a maximum power dissipation of 100 mW. The component is housed in an ES6 surface-mount package and holds AEC-Q101 automotive qualification.
Verify the complete part number including the suffix LXHF(CT to ensure correct packaging and variant alignment. Confirm AEC-Q101 certification requirements if deploying in automotive environments. Cross-reference the ES6 package dimensions with PCB footprint specifications during layout. Ensure input voltage limits are respected to prevent junction damage.
Select this component when a dual NPN solution with fixed 10 kΩ biasing resistors is required. Compare against the RN1902 series variants to determine if different resistor values or packaging options better suit specific impedance matching needs. Consider the 100 mA current limit for load driving capabilities. Verify thermal management requirements given the 100 mW power dissipation rating in the compact ES6 package.
This part belongs to the RN1902 family of pre-biased transistor arrays from Toshiba. It shares core electrical characteristics with other RN1902 variants but differs in packaging and specific suffix designations. The FE suffix typically indicates a specific tape-and-reel or cut-tape packaging format within the broader product line.
Direct substitutes include RN1902,LF(CT and RN1902,LXHF(CT. Verify pinout compatibility and resistor tolerance specifications before substitution. Check if alternative packages such as US6 require mechanical redesign.