RN1902,LF(CT

Overview

The RN1902,LF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a US6 (SOT-363) surface-mount package. The device features a collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. Internal resistor values are 10kΩ for both R1 and R2. Key electrical characteristics include a DC current gain (hFE) of 50 at IC=10mA/VCE=5V, a transition frequency (fT) of 250MHz, and a maximum power dissipation of 200mW.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors to simplify circuit design
• Reduces component count and manufacturing process steps compared to discrete solutions
• Provides high-speed switching capability with a transition frequency of 250MHz
• Offers complementary functionality within the RN190x series alongside PNP variants

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging configuration. Confirm RoHS compliance status directly with the manufacturer or authorized suppliers prior to procurement. Ensure the selected variant matches the required lead time and availability constraints for the production schedule.

Selection Notes

Select this component when a dual NPN configuration with integrated base and emitter resistors is required. The 10kΩ internal resistance values suit standard logic interface applications. Verify that the 50V breakdown voltage and 100mA current rating meet the specific load requirements of the target application circuit.

Part Context

This part belongs to the RN1901-RN1906 family of pre-biased transistor arrays. These devices utilize a silicon NPN epitaxial type structure with a P CT process. The RN1902 specifically provides symmetric 10kΩ bias resistors, distinguishing it from other models in the series that offer different resistance ratios or combinations.

Replacement Considerations

Direct substitutes must match the US6 package, 50V/100mA ratings, and 10kΩ/10kΩ internal resistor configuration. Verify pinout compatibility and thermal characteristics before substitution.