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The RN1902,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors in an ES6 (SOT-563) surface-mount package. Key electrical specifications include a collector-emitter voltage (Vceo) of 50V, a continuous collector current (Ic) of 100mA, and a transition frequency (fT) of 250MHz. The device features base resistor R1 and emitter resistor R2 values of 10kΩ each. It has a maximum power dissipation of 200mW and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix LXHF(CT against the manufacturer's official datasheet to confirm pinout compatibility and resistance values. Ensure the ordering code matches the required packaging format, such as tape and reel or cut tape, as specified in the procurement documentation. Cross-reference the AEC-Q101 certification status if automotive compliance is mandatory for the target application.
Select this component when a dual NPN configuration with integrated biasing is required for high-speed switching applications up to 250MHz. The 10kΩ internal resistor ratio suits standard logic interface levels. Consider the 200mW power dissipation limit and thermal management requirements for the ES6 package during PCB layout planning.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. The RN1902 variant specifically provides a symmetrical dual NPN structure. It serves as a compact alternative to discrete transistor networks, reducing component count and board space in digital control systems.
Check for direct substitutes within the RN190x family, such as RN1901 or RN1904, ensuring identical resistor values and polarity. Verify that any replacement maintains the same ES6 package footprint and AEC-Q101 qualification if automotive use is intended.