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The RN1902T5LFT is a dual NPN bias resistor built-in transistor from the Toshiba RN190x series, housed in a US6 (SOT-363) surface-mount package. It integrates two NPN transistors with identical base and emitter resistors of 10 kΩ each. Key electrical ratings include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, a transition frequency of 250 MHz, and a maximum junction temperature of 150 °C.
Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging configuration. Ensure compliance with environmental directives such as RoHS by checking the manufacturer's latest product status information before finalizing procurement specifications.
Select this component for applications requiring dual NPN switching with integrated biasing. Confirm that the 10 kΩ internal resistor values align with the target logic levels and drive requirements. Verify that the 50 V voltage rating and 100 mA current capacity are sufficient for the intended load conditions.
This part belongs to the RN190x family of bias resistor built-in transistors, which includes variants with different resistor ratios. It serves as a complementary counterpart to the PNP RN290x series, enabling push-pull configurations within a minimal footprint suitable for space-constrained electronic designs.
Direct substitutes within the same series include RN1901, RN1903, RN1904, RN1905, and RN1906. These alternatives share identical electrical characteristics but differ in internal resistor values. Cross-family replacements require verification of pin compatibility and resistor ratios.