RN1903FE,LF(CT

Overview

The RN1903FE,LF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal biasing resistors in an ES6 surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V and a maximum continuous collector current (Ic) of 100mA. The device features a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 1 kΩ. It operates with a transition frequency (fT) of 250MHz and has a maximum power dissipation of 100mW. The DC current gain (hFE) is specified at a minimum of 80 when tested at Ic=10mA and Vce=5V.

Feature Summary

• Integrates two NPN transistors with built-in biasing resistors to simplify circuit design
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Automotive-grade reliability compliant with AEC-Q101 standards

Applications

• Automotive electronic control units requiring reliable switching
• General-purpose digital logic interface circuits
• Level shifting between different voltage domains in consumer electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and compliance status. Confirm that the ES6 package variant matches the intended PCB footprint requirements. Check for RoHS3 compliance documentation if required by regional regulations. Ensure storage conditions adhere to moisture sensitivity level 1 guidelines to prevent soldering defects during assembly.

Selection Notes

Select this component when a compact solution for dual NPN switching with integrated biasing is required. The 4.7kΩ base resistor suits standard TTL/CMOS logic interfaces. Compare power dissipation limits against thermal constraints in the final enclosure. Consider the ES6 package dimensions for space-constrained designs compared to larger through-hole alternatives.

Part Context

This part belongs to the RN190x series of pre-biased transistor arrays from Toshiba. These devices are designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs. The FE suffix typically denotes automotive qualification or specific reliability enhancements within the product line.

Replacement Considerations

Direct substitutes include other RN190x series variants with matching resistor values. Verify pinout compatibility before replacing with similar packages from other manufacturers. Ensure equivalent hFE and fT ratings are maintained for signal integrity.