RN1903FE,LXHF(CT

Overview

The RN1903FE,LXHF(CT is a dual pre-biased NPN digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal base and emitter resistors, each rated at 4.7 kΩ, within an ES6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a transition frequency of 250MHz, a DC current gain (hFE) minimum of 30 at 10mA/5V, and a saturation voltage of 300mV at specific test conditions. It is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

• Dual NPN configuration with integrated biasing resistors simplifies circuit design by reducing component count.
• AEC-Q101 qualification ensures reliability and suitability for demanding automotive electronic environments.
• ES6 compact surface-mount packaging facilitates automated assembly and space-constrained board layouts.

Applications

• Automotive logic level shifting and signal switching circuits
• General-purpose digital switching in consumer electronics
• Interface driving for microcontroller GPIO expansion

Procurement Notes

Verify the complete part number including the LXHF(CT suffix against official Toshiba documentation to confirm the specific tape-and-reel or cut-tape packaging variant. Ensure that the ES6 package footprint matches the target PCB land pattern. Confirm AEC-Q101 compliance requirements align with the end-product specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN pre-biased solution is required with 4.7kΩ internal resistors. Compare the 50V Vceo and 100mA Ic limits against the application load. Consider the 250MHz transition frequency for high-speed switching needs. Verify thermal dissipation capabilities within the 100mW power limit for the chosen operating environment.

Part Context

This part belongs to the RN19xx series of pre-biased transistors from Toshiba. It shares the same internal topology as the RN1901FE but differs in the specific resistor values or pinout configurations defined by the series numbering. The FE suffix typically denotes the specific resistor combination and package type within the broader RN family.

Replacement Considerations

Direct substitutes may include other dual NPN pre-biased transistors with identical 4.7kΩ resistor values and ES6 packaging. Verify pin compatibility and electrical parameters such as Vceo, Ic, and hFE before substitution. Check for equivalent AEC-Q101 qualification if automotive use is intended.