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The RN1903,LXHF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with internal biasing resistors in an ES6 surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistors R1 and R2 are both 4.7 kΩ. Key electrical parameters include a transition frequency of 250MHz, maximum power dissipation of 100mW, and a DC current gain (hFE) minimum of 30 at 10mA and 5V. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and resistor values. Ensure the component meets the required AEC-Q101 automotive grade standards for the target application environment. Cross-reference the ES6 package dimensions with the PCB footprint library to prevent assembly errors during manufacturing.
Select this component when a dual NPN pre-biased solution is required with 4.7kΩ base and emitter resistors. Compare the 100mW power dissipation limit against thermal requirements. Verify that the 50V breakdown voltage exceeds the maximum operating voltage. Consider the 250MHz transition frequency for high-speed switching needs compared to lower-frequency alternatives.
This part belongs to the RN19xx series of dual pre-biased transistors from Toshiba. It shares the same basic RN1901 architecture but may differ in specific resistor ratios or packaging variants within the broader product family. The LXHF suffix typically indicates lead-free and halogen-free compliance consistent with RoHS directives.
Direct substitutes include RN1901,LXHF(CT and RN1901FE,LXHF(CT. Verify that alternative parts match the 4.7kΩ resistor values and ES6 package type. Confirm equivalent AEC-Q101 qualification if automotive usage is intended.