RN1904FE,LF(CT

Overview

The RN1904FE,LF(CT is a dual NPN digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in bias resistors in a compact surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Internal resistor values are specified as R1 at 4.7 kΩ and R2 at 1 kΩ. Key electrical parameters include a DC current gain (hFE) of 30 at 10mA/5V, a saturation voltage of 300mV at 250µA base current and 5mA collector current, and a transition frequency of 250MHz. The component operates within a power dissipation limit of 200mW.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to simplify circuit design
• Provides high-speed switching capability with a 250MHz transition frequency
• Offers low saturation voltage for efficient signal handling
• Utilizes a compact US6 surface-mount package for space-constrained applications

Applications

• General-purpose switching circuits requiring integrated biasing
• Driver stages for logic interfaces and level shifting
• High-frequency signal processing in consumer electronics

Procurement Notes

Verify the specific suffix FE against official Toshiba documentation to confirm pinout or electrical variations relative to standard variants. Ensure the LF designation confirms lead-free compliance if required by assembly specifications. Cross-reference the CT packaging code with distributor data sheets to confirm reel or cut-tape availability before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with pre-biased resistors is required to reduce external component count. The 4.7kΩ input resistance and 1kΩ emitter resistance define the drive characteristics. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. The US6 package size should be compatible with the available PCB footprint and manufacturing capabilities.

Part Context

This part belongs to the RN190x series of dual NPN digital transistors from Toshiba. It shares the same core electrical specifications and package type as the RN1901 but may differ in internal resistor configurations or specific suffix designations. The series is designed for general-purpose switching applications where space savings and simplified biasing networks are prioritized over discrete component flexibility.

Replacement Considerations

Publicly confirmed substitute part numbers for RN1904FE,LF(CT were not identified in the provided source material. Verify compatibility with other RN190x series variants only if their datasheets explicitly state functional equivalence.