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The RN1904FE,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in bias resistors in an ES6 surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistors are configured with R1 at 4.7 kΩ and R2 at 4.7 kΩ. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at 10mA and 5V, a saturation voltage of 300mV at 250µA base and 5mA collector current, and a transition frequency of 250MHz. Maximum power dissipation is rated at 100mW.
Verify the specific suffix LXHF(CT against the manufacturer's official datasheet to confirm resistor values and packaging type. Ensure the component meets AEC-Q101 requirements if used in automotive systems. Cross-reference the ES6 package dimensions with your PCB footprint library before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. Compare the 4.7kΩ/4.7kΩ resistor ratio against other RN19xx series variants like RN1901 or RN1902 if different biasing ratios are needed. Verify that the 100mA current rating and 50V voltage limit align with the target application's load requirements.
This part belongs to the RN1901-06 series of pre-biased transistor arrays from Toshiba. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The ES6 package corresponds to the SOT-563 or SOT-666 form factor, widely used in compact consumer and industrial electronics.
RN1904,LF(CT offers similar specifications but may differ in packaging or environmental compliance details.