RN1904FE,LXHF(CT

RN1904FE,LXHF(CT

$0.34
  • Description:AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
  • Series:-

SKU:bd0195e37118 Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN1904FE,LXHF(CT

Overview

The RN1904FE,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in bias resistors in an ES6 surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistors are configured with R1 at 4.7 kΩ and R2 at 4.7 kΩ. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at 10mA and 5V, a saturation voltage of 300mV at 250µA base and 5mA collector current, and a transition frequency of 250MHz. Maximum power dissipation is rated at 100mW.

Feature Summary

  • Integrates dual NPN transistors with fixed internal bias resistors to simplify circuit design
  • Optimized for high-speed switching applications with a 250MHz transition frequency
  • Automotive-grade qualification compliant with AEC-Q101 standards

Applications

  • Switching circuits in automotive electronic control units
  • Inverter and interface driver circuits
  • General-purpose logic level translation

Procurement Notes

Verify the specific suffix LXHF(CT against the manufacturer's official datasheet to confirm resistor values and packaging type. Ensure the component meets AEC-Q101 requirements if used in automotive systems. Cross-reference the ES6 package dimensions with your PCB footprint library before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. Compare the 4.7kΩ/4.7kΩ resistor ratio against other RN19xx series variants like RN1901 or RN1902 if different biasing ratios are needed. Verify that the 100mA current rating and 50V voltage limit align with the target application's load requirements.

Part Context

This part belongs to the RN1901-06 series of pre-biased transistor arrays from Toshiba. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The ES6 package corresponds to the SOT-563 or SOT-666 form factor, widely used in compact consumer and industrial electronics.

Replacement Considerations

RN1904,LF(CT offers similar specifications but may differ in packaging or environmental compliance details.

RN1904FE,LXHF(CTRN1904FE,LXHF(CT
$0.34
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