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The RN1904,LF(CT is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors in a US6 (SOT-363) surface-mount package. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 100mA per transistor. Internal resistors are configured as R1 = 47kΩ and R2 = 47kΩ. Electrical characteristics include a DC current gain (hFE) of 80 at IC=10mA/VCE=5V, a transition frequency (fT) of 250MHz, and a maximum power dissipation of 200mW.
Verify the specific ordering suffix against official distributor catalogs to confirm packaging format. The CT suffix typically indicates Cut Tape packaging, while other suffixes may denote Reel or Tray configurations. Ensure the requested quantity matches the minimum order requirements associated with the selected packaging type before finalizing procurement orders.
Select this component when a dual NPN configuration with equal 47kΩ bias resistors is required. It serves as a complementary counterpart to the PNP RN2904 device within the same series. Verify that the 50V voltage rating and 100mA current limit align with the target application's electrical demands and thermal constraints.
This part belongs to the RN190x series of pre-biased transistors from Toshiba. The series includes variants with different resistor ratios (e.g., RN1901, RN1902). The RN1904 specifically utilizes a 1:1 resistor ratio. These devices are designed to replace multiple discrete components, offering space savings on printed circuit boards while maintaining consistent electrical performance across temperature ranges.
The RN2904 is the complementary PNP equivalent in the same series. Direct pin-to-pin substitution with other RN19xx models requires verification of internal resistor values and hFE specifications to ensure circuit compatibility.