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The RN1904,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in biasing resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V, a continuous collector current (IC) of 100mA, and a transition frequency (fT) of 250MHz. The device features a base resistor (R1) of 4.7kΩ and an emitter resistor (R2) of 4.7kΩ. It has a maximum power dissipation of 100mW and meets AEC-Q101 automotive qualification standards.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and variant selection. Confirm that the component meets the required AEC-Q101 automotive qualification if used in vehicle systems. Cross-reference the ES6 package designation with your PCB footprint library to guarantee mechanical compatibility during assembly.
Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. Ensure the 50V voltage rating and 100mA current capacity align with the load requirements. Consider the 100mW power dissipation limit and thermal management needs for the chosen operating environment.
This part belongs to Toshiba's RN series of digital transistors, which are designed to replace discrete resistor-transistor networks. The RN1904 specifically provides a point-symmetric dual NPN configuration, offering a compact alternative to individual components while maintaining consistent performance characteristics across both channels.
Direct substitutes may include other dual NPN pre-biased transistors from manufacturers like ROHM or ON Semiconductor with matching VCEO, IC, and R1/R2 values. Verify pinout compatibility and package dimensions before substitution.