RN1905FE,LF(CT

Overview

The RN1905FE,LF(CT is a dual pre-biased NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in biasing resistors in a compact US6 surface-mount package (equivalent to SC-88 or SOT-363). The device supports a maximum collector current of 100mA and a collector-emitter voltage rating of 50V. Key electrical specifications include a DC current gain (hFE) minimum of 100 at 10mA and 5V, a saturation voltage of 300mV maximum at 250µA base current and 5mA collector current, and a transition frequency of 250MHz. Internal resistor values are specified as R1 = 4.7kΩ and R2 = 1kΩ.

Feature Summary

• Integrates dual NPN transistors with fixed biasing resistors to simplify circuit design
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Provides low saturation voltage for efficient power consumption during conduction
• Utilizes a compact US6 surface-mount package for space-constrained layouts

Applications

• General-purpose switching circuits in consumer electronics
• Driver stages for logic interface applications
• Signal processing circuits requiring compact dual-transistor configurations

Procurement Notes

Verify the specific FE suffix against the manufacturer's official datasheet to confirm internal resistance tolerances and binning classifications. Ensure the ordering code matches the required tape-and-reel packaging format. Cross-reference the RoHS3 compliance status with current environmental regulations before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. Compare the 4.7kΩ base resistor value against circuit requirements to ensure proper drive levels. Evaluate the 100mA current capacity against load demands to prevent exceeding the maximum ratings.

Part Context

This part belongs to the RN19xx series of pre-biased BJT arrays from Toshiba Semiconductor and Storage. These devices are designed to replace multiple discrete components, including transistors and resistors, thereby saving board space and assembly time. The RN1905 variant specifically provides a dual NPN configuration with distinct resistor values compared to other members of the family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual NPN pre-biased arrays by matching pinout configurations, voltage ratings, and internal resistor values.