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The RN1905FE,LXHF(CT is a pre-biased dual NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. Internal resistors are configured with R1 at 2.2 kΩ and R2 at 47 kΩ. It operates within a junction temperature range up to 150°C and has a maximum power dissipation of 200mW.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Ensure the component matches the required AEC-Q101 qualification if used in automotive applications. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and current production status before procurement.
Select this component when space-constrained designs require two matched NPN switches with fixed biasing. The integrated resistor network reduces external component count compared to discrete solutions. Verify that the 100mA current rating and 50V voltage limits align with the target application's electrical requirements.
This part belongs to the RN190x series of pre-biased transistor arrays from Toshiba. These devices are designed to replace multiple discrete components, including transistors and resistors, thereby reducing board space and assembly complexity. The series offers various resistor combinations to suit different logic families and drive requirements.
Consult official Toshiba substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence for any cross-brand replacements.